压电和铁电薄膜及其应用的发展趋势

Future Trends in Piezoelectric and Ferroelectric Film Materials and Their Applications

本文讨论了压电和铁电薄膜材料及其在固体器件中应用的发展趋势。薄膜生长技术的进展,为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。ZnO和AIN薄膜将广泛地用于SAW和BAW器件。特别是成功地制作了薄膜体声波谐振器和高次谐波体波谐振器。以PbTiO_3为基的PZT和PLZT固溶体外延薄膜将应用于热电探测器和SAW器件。在实现了对多层薄膜的界面结构及其特性的成功控制之后,铁电薄膜将在铁电存储和集成光学领域发挥重要作用。

This paper described the future trends in piezoelectric and ferroelectric film materials and their applications. Through the progress of film growth technology, new prospects are created in a wide range for integrated solid state devices made of piezoelectric and ferroelectric films. ZnO and A1N films will be widely used for SAW and BAW devices. Specially, more success in device performance has been obtained for film bulk acoustic wave resonators (FBARs) and high overtone bulk acoustic resonators(HBARs). PZT and PLZT epitaxial solid solution films will be used for pyroelectric detectors and SAW devices. It is possible to use ferroelectric films in ferroelectric memories with high Performances and integrated optics fields,but this depends on the successful control of interface structure and properties of multiple films.