离子束改性对颗粒膜巨磁电阻效应的影响

The Effect of Ion Implantation on the Giant Magnetoresistance of Granular Film

用射频磁控溅射方法在Si/SiO2 衬底上制备了 (NiFeCo) 3 6Ag64 颗粒膜。用四探针法测量了注入Co离子前后(NiFeCo) 3 6Ag64 颗粒膜巨磁电阻效应的变化。用场发射扫描电镜分析了颗粒膜的形貌及成分。实验结果表明 :注入Co离子对颗粒膜巨磁电阻有显著的影响 ,在相同退火温度下 ,注入离子可使GMR效应提高一倍以上。随着退火温度增加 ,颗粒膜巨磁电阻效应先增加而后减小 ,在 36 0℃下退火可获得 10 .2 %的最大室温巨磁电阻效应。

NiFeCo) 36 Ag 64 granular films were deposited on the substrate of Si/SiO 2 by RF magnetron sputtering.Before and after Co ion implantation in the (NiFeCo) 36 Ag 64 granular films,the change of giant magnetoresistance(GMR) were measured by four point probe device and Vibration Sample Magnetometer(VSM).The structure,appearance and component were analyzed by Field Electron Microscope(FEM).The conclusion is that anneal can improve the GMR of the granular film.The GMR of the granular film is remarkably effected after Co ion implantation.A critical anneal temperature appears after Co ion implantation.The GMR can be improved above one time after Co ion implantation in the same anneal temperature.The GMR increases and then decreases with the anneal temperature increasing.The best GMR of room temperature achieved is 10.2% in 360℃ anneal temperature.