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金刚石薄膜异质外延的研究进展 被引量:2

DEVELOPMENT OF RESEARCHES ON HETEROEPITAXY DIAMOND FILMS
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摘要 主要介绍金刚石薄膜在Si上异质外延的研究状况。综述了外延金刚石薄膜的偏压形核 ,SiC过渡层的影响及一些实验参数对外延薄膜质量的影响等 。 The status in the researches on synthesizing heteroepitaxial diamond thin films on silicon is introduced. Bias enhanced nucleation,action of SiC in film deposition and effect of different parameters on qualities of heteroepitaxial are summarized.Some problems that worth further researches in this field are presented.
出处 《真空与低温》 2002年第2期71-76,共6页 Vacuum and Cryogenics
关键词 金刚石薄膜 异质外延 CVD 半导体材料 偏压形核 生长控制 外延生长 diamond thin films heteroepitaxy CVD
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参考文献34

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同被引文献46

  • 1Matsumoto S,Sato Y,Tsutsimi M,Vapor deposition of diamond particles from methane[J].J Mater Sci,1982,(17):3106-3110.
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  • 8Fan W D,Chen X, Agannadham K J.Diamond-ceramic composite tool coatings[J].J Mater Res.,1994,9(11):2850-2867.
  • 9Nesladek M.Adhesion of diamond coatings on cemented carbides[J].Thin Solid Films,1995,(270):184-188.
  • 10Cremer R.Formation of inter-metallic cobalt phases in the near surface region of cemented carbides for improved diamond layer deposition[J].Thin Solid Films,1999,(355/356):127-133.

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