Si_6团簇与Si(111)表面碰撞的分子动力学模拟

Molecular Dynamics Simulations of Si_6 in Collision with a Silicon(111) Surface

利用紧束缚分子动力学方法模拟研究了Si6团簇与Si(111)表面碰撞的微观过程 .结果表明 :Si6团簇在表面再构并吸附的能量阈值为 10eV ,损伤域能为 6 0eV .通过对碰撞结果的讨论得到了改变轰击能量可以控制外延生长的结构的结论 .

The collision of Si 6 with a silicon(111) surface has been investigated by molecular dynamics simulation with tight binding potentials. At an impact energy of 10 eV, Si 6 reconstructs on the surface. Then the damage energy is 60 eV. Furthermore, by changing the initial energy, the structure of epitaxial growth can be controlled.