反应溅射制备AlN薄膜中沉积速率的研究

Study on Deposition Rate of AlN Thin Films Using Reactive Magnetron Sputtering

通过对溅射过程中辉光放电现象及薄膜沉积速率的研究 ,发现随着氮浓度的增大 ,靶面上形成一层不稳定的AlN层 ,由于AlN的溅射速率远小于Al,从而使薄膜的沉积速率显著下降。同时还研究了其它溅射参数对薄膜沉积速率的影响。结果表明 :随靶基距的增大和靶功率的减小 ,不同程度引起沉积速率的下降 ;随着溅射气压的增大 ,最初沉积速率不断增大 ,当溅射气压增大到一定程度时 ,沉积速率达到最大值 ,之后随溅射气压的增大 ,又不断减小。

By studying the bright discharge phenomenon in the sputtering process and the deposition rate of the AlN films, it was found that an instable AlN layer was formed on the target surface with increasing the N 2 concentration. Since the sputtering rate of AlN target was very lower than that of the Al target, the deposition rate of AlN films was decreased rapidly. At the meantime, the effects of other experimental parameters on the deposition rate have been studied. The results shown that the deposition rate decreased with increasing the distance ( D ) from target to substrate and decreasing target power, whereas the deposition rate reached a extremum with increasing sputtering pressure from 03 Pa to 12 Pa.