摘要
由于材料的晶格常数与热膨胀系数的不同,应变异质外延生长过程中引入大量缺陷,柔性衬底技术就是为了解决这一问题而发展起来的。本文对柔性衬底技术的发展历史进行了简要的回顾,系统地介绍了各种柔性衬底技术的发展现状,包括已经取得的成果以及存在的问题,并简要介绍了柔性衬底技术的理论基础。
出处
《金属材料研究》
2002年第2期1-6,共6页
Research on Metallic Materials
同被引文献40
-
1王晓峰,王雷,赵万顺,孙国胜,黄风义,曾一平.厚表层Si柔性绝缘衬底上SiC薄膜的外延生长[J].Journal of Semiconductors,2004,25(12):1652-1657. 被引量:1
-
2Camassel J. State of the art of 3C-SiC/silicon on insulators. J Vac Sci Technol B,1998,16(3):1648.
-
3Metzger R A. SOI without SOI substrates. Compound Semiconductor Magazine, 2000,6(7): 1.
-
4Lo Y H. New approach to grow pseudomorphic structures over the critical thickness. Appl Phys Lett,1991,59(18):2311.
-
5Lee B T,Moon C K, Song H J, et al. Chemical-vapor-deposition growth and characterization of epitaxial 3C-SiC films on SOI substrates with thin silicon top layers. J Mater Res,2001,16(1):24.
-
6Park J H,Kim J H,Kim Y,et al. Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films. Appl Phys Lett,2003,83(10) :1989.
-
7Chua C L,Hsu W Y,Lin C H,et al. Overcoming the pseudomorphic critical thickness limit using compliant substrates.Appl Phys Lett,1994,64(26) :3640.
-
8Sun Guosheng,Wang Lei,Luo Muchang,et al. Improved epitaxy of 3C-SiC layers on Si(100) by new CVD/LPCVD system. Chinese Journal of Semiconductors, 2002,23 (8): 800.
-
9Papaioannou V,Moller H,Rapp M,et al. Evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD. Mater Sci Eng B, 1999,61/62:539.
-
10Bustarret E,Vobornik D,Roulot A,et al. Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy.Phys Status Solidi A,2003,195(1):18.
引证文献2
-
1王晓峰,王雷,赵万顺,孙国胜,黄风义,曾一平.厚表层Si柔性绝缘衬底上SiC薄膜的外延生长[J].Journal of Semiconductors,2004,25(12):1652-1657. 被引量:1
-
2王晓峰,黄风义,孙国胜,王雷,赵万顺,曾一平,李海鸥,段晓峰.Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J].Journal of Semiconductors,2005,26(9):1681-1687.
-
1梁李敏,刘彩池,解新建,王清周.高质量GaN薄膜生长工艺的研究进展[J].材料导报,2010,24(7):127-131.
-
2张荣,顾书林,沈波,修向前,卢佃清,施毅,郑有火斗,王占国.GaN大失配异质外延技术[J].铁道师院学报,2002,19(1):1-3. 被引量:2
-
3郑代顺,钱可元,罗毅.大功率发光二极管的寿命试验及其失效分析[J].半导体光电,2005,26(2):87-91. 被引量:43
-
4金珂.毫米波LTCC基板组装技术研究[J].中国科技信息,2012(12):179-179. 被引量:3
-
5郭大琪,黄强.倒装芯片下填充工艺的新进展(二)[J].电子与封装,2008,8(2):6-8. 被引量:1
-
6郭大琪,黄强.倒装芯片下填充工艺的新进展(一)[J].电子与封装,2008,8(1):16-20. 被引量:2
-
7孙国胜,罗木昌,王雷,赵万顺,孙艳玲,曾一平,李晋闽,林兰英.Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究(英文)[J].发光学报,2003,24(4):421-425. 被引量:4
-
8胡加辉.GaN外延薄膜的研究进展[J].中国照明,2006(9):36-40.
-
9张强,王鸣,戎华.硅压力传感器中硅玻璃阳极键合的热应力分析[J].光学与光电技术,2009,7(3):33-36. 被引量:6
-
10尹志军,钟飞,邱凯,李新化,王玉琦.利用混合极性制备多孔缓冲层及其在GaN厚膜外延中的应用[J].Journal of Semiconductors,2007,28(6):909-912.