摘要
由于材料的晶格常数与热膨胀系数的不同,应变异质外延生长过程中引入大量缺陷,柔性衬底技术就是为了解决这一问题而发展起来的。本文对柔性衬底技术的发展历史进行了简要的回顾,系统地介绍了各种柔性衬底技术的发展现状,包括已经取得的成果以及存在的问题,并简要介绍了柔性衬底技术的理论基础。
出处
《金属材料研究》
2002年第2期1-6,共6页
Research on Metallic Materials
同被引文献40
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引证文献2
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1王晓峰,王雷,赵万顺,孙国胜,黄风义,曾一平.厚表层Si柔性绝缘衬底上SiC薄膜的外延生长[J].Journal of Semiconductors,2004,25(12):1652-1657. 被引量:1
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2王晓峰,黄风义,孙国胜,王雷,赵万顺,曾一平,李海鸥,段晓峰.SOI衬底对3CSiC异质外延薄膜内残存应力的影响(英文)[J].Journal of Semiconductors,2005,26(9):1681-1687.
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1梁李敏,刘彩池,解新建,王清周.高质量GaN薄膜生长工艺的研究进展[J].材料导报,2010,24(7):127-131.
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2张荣,顾书林,沈波,修向前,卢佃清,施毅,郑有火斗,王占国.GaN大失配异质外延技术[J].铁道师院学报,2002,19(1):1-3. 被引量:2
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6郭大琪,黄强.倒装芯片下填充工艺的新进展(一)[J].电子与封装,2008,8(1):16-20. 被引量:2
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7孙国胜,罗木昌,王雷,赵万顺,孙艳玲,曾一平,李晋闽,林兰英.Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究(英文)[J].发光学报,2003,24(4):421-425. 被引量:4
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8胡加辉.GaN外延薄膜的研究进展[J].中国照明,2006(9):36-40.
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9张强,王鸣,戎华.硅压力传感器中硅玻璃阳极键合的热应力分析[J].光学与光电技术,2009,7(3):33-36. 被引量:6
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10尹志军,钟飞,邱凯,李新化,王玉琦.利用混合极性制备多孔缓冲层及其在GaN厚膜外延中的应用[J].Journal of Semiconductors,2007,28(6):909-912.