n型聚合物掺杂p型聚合物单层电致发光器件

Single Layer Electroluminescent Devices Based on Blends of p-type and n-type Polymers

成功制备了可溶性 n型聚合物 PPQ掺杂的可溶性 p型聚合物 PDDOPV的单层发光器件。与具有相同厚度的纯 PDDOPV的单层器件相比 ,起亮电压从 4 .5 V降低到 2 .6 V;在电压相同的条件下 ,掺杂的单层器件的电流和纯 PDDOPV的单层器件在同一个数量级 ,但亮度和发光效率均高出 1个数量级以上。在 10 V时 ,掺杂器件与未掺杂器件的电流、亮度和发光效率的比值分别是 1.95 ,30 .9和 16 .0。掺杂器件亮度和发光效率的大幅提高被归因于在 PDDOPV中掺杂 PPQ降低了少子的注入势垒 ,提高了少子注入水平。这一结果表明 ,在可溶性 p型聚合物中掺杂可溶性 n型聚合物是提高器件性能的有效方法。

Single layer electroluminescent (EL) devices based on soluble p-type polymer PDDOPV doped by n-type soluble polymer PPQ are successfully fabricated. Comparing with single layer devices of pure PPDOPV, the turn-on voltage of doped single layer devices is drop from 4.5 v to 2.6 V at the same applied voltage, the current is higher but still at the same order of magnitude, and the brightness and luminescent efficiency are both enhanced more than one order of magnitude. At 10 V, the current, brightness and luminescent efficiency of devices of blends are 1.95, 30.9 and 16.0 times of those of devices of pure PPDOPV respectively. The remarkable enhancement of doped devices is attributed to the reduction of injection barrier of minority carrier and enhancement of minority carrier injection caused by the doping PPQ in PDDOPV. This result demonstrates that it is an effective way to improve the device performance by doping n-type polymer in p-type polymer.