压缩真空场中量子存储单元的消相干特性

Decoherence Properties of Quantum Memory Cell in Squeezed Vaccum Reservoir

两能级原子作为量子存储单元 ,当存储单元置于压缩真空库 (人工制备的库 )时 ,利用存储单元约化密度算符非对角元的时间演化 ,研究单光子过程和简并双光子过程中存储单元的消相干特性。在压缩真空库中 ,可以消除量子存储单元的消相干。

The two level atom is regarded as quantum memory cell when the quantum memory cell is put in a squeezed vaccum reservoir.Using the time evolution properties of non opposite angle element of quantum memory cells reducible density rectangular array,decoherence properties of quantum memory cell is studied.Quantum memory cells decoherence can be eliminated in a squeezed vaccum reservoir.