摘要
从可靠性物理的角度,深入分析了引起砷化镓微波单片集成电路(GaAsMMIC)退化或失效的主要失效模式及其失效机理,明确了 GaAs MMIC的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化,主要的失效部位是MMIC的有源器件。
Based on reliability physics, the basic failure modes and mechanisms of GaAs MMIC have been analyzed. Degeneration and damage related to active parts and passive parts of GaAs MMIC and environments are dominating reliability problems. The most failure locates active parts of MMIC.
出处
《电子产品可靠性与环境试验》
2002年第3期9-14,共6页
Electronic Product Reliability and Environmental Testing