VLSI圆片级可靠性技术

VLSI Wafer Level Reliability Technology

介绍了圆片级可靠性技术产生的背景,对其特点和作用作了详细的论述。测试内容上着重介绍了金属化完整性测试、氧化层完整性测试、连接完整性测试和热载流子注入测试,根据测试数据,对1.0μm工艺线单一失效机理的可靠性进行了评价,对不同测试结构的作用进行了说明。

This paper introduces the background of using Wafer Level Reliability technology, and expounds the characteristics and functions in details. The emphasis is about the Metal line reliability, Contact reliability, Gate oxide integrity, and Hot carrier injection in test . Based on the test datum, the reliability of 1.0 um process on single failure mechanisms is evaluated, and all the test structures are explained.