摘要
介绍了 Ga As光电阴极在高温烘烤后不同深度上 Ga原子和 As原子氧化的 XPS分析结果 ,并对 Ga As中的 Ga原子比 As原子更容易氧化以及 Ga As光电阴极在经过高温烘烤后 。
It described the surface XPS analysis results of GaAs photocathode baked in the temperature of 400℃ and in the vaccum degree of 666.612×10 -6 Pa,explained the phenomenon that Ga atom in GaAs is oxidized more easily than As atom.It also discussed the effection of oxidization on sensitivity of GaAs photocathode
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第6期778-780,共3页
Acta Photonica Sinica
