As离子注入碲镉汞的p^+n结红外探测器

p^+n Infrared Detectors by As Ion Implantation in HgCdTe

讨论了制作pn结的另一种途径 ,即在n型HgCdTe材料上离子注入As+,然后通过辐射快速退火形成反型 p+层来获得 p+n结。通过对制作工艺及实验结果的讨论 ,阐述了两种制作 pn结工艺的特点。实验表明 ,采用辐射快速退火工艺可以在短时间内完成对HgCdTe注入表面的缺陷退火和杂质激活 ,而不会改变HgCdTe组份。已用此方法在注入As+的n型HgCdTe样片上制作出性能较好的 p+n结光伏红外探测器。

To fabricate PV type infrared detectors of HgCdTe, the normal way is forming the n + doping layers on p HgCdTe by boron ion implantation without annealing. Another way is obtained the p + doping layers on n HgCdTe by annealing after arsenic ion implantation. The characters of both methods are compared and discussed. Experiments with the latter way showed that the seemly annealing technique could obtain high performance p +n PV diodes on n HgCdTe. Radiation quick annealing technique, a new kind of annealing means for HgCdTe, with short time and without changing the composition, is also introduced.