射频磁控溅射GaP薄膜的光学性能

Optical Properties of Gap Film Prepared by RF Magnetron Sputtering

采用射频磁控溅射方法在ZnS衬底上制备了不同工艺参数下的GaP薄膜 ,并通过FTIR分析了工艺参数对GaP薄膜红外透过率的影响规律。利用优化后的工艺参数成功地制备了厚为 10 .5 μm的GaP膜 ,根据膜系设计结果制备了DLC/GaP膜系。实验表明 ,GaP厚膜与基体结合性能较好 ,光学性能亦有所改善 ;DLC/GaP膜系的红外增透效果良好 ,在 8～ 11.5 μm波段平均透过率净增 5 .6 9% ,足以满足 8～ 11.5 μm增透要求。

GaP films with different deposition parameters had been prepared on the ZnS substrate by radio frequency(RF) magnetron sputtering. The affection of different deposition parameters, such as RF power, gas pressure, gas flow rate and film thickness on infrared transmission of GaP films were analysed with FTIR. From which a group of optimum parameters were selected to have prepared 10.5 μm GaP film on substrate with a better bonding strength and obtained a multiplayer of DLC/GaP according to designed requirement. Results show the antireflection property of DLC/GaP films is excellent, and the increase of the mean transmission in 8～11.5 μm waveband is 5.69%, which can meet the application requirement.