网状阴极法在碳钢表面沉积氮化钽薄膜的研究

Study of TaN Film Synthesized in Carbon Steel Substrate by the Net-Shape Cathode Sputtering Method

介绍了一种在钢铁基体上制备氮化钽薄膜的新方法———网状阴极法。其设备简单、价格低廉。实验中发现 ,在工艺参数调配合适的条件下 ,可制备出结构为面心立方和密排六方结构的氮化钽薄膜。薄膜较致密且均匀 ,与基体结合良好。分析了优选工艺参数条件下合成的氮化钽膜的成分、组织、表面和断口形貌及结合力。

A new method, which synthesized tantalum nitride film by the net shape sputtering cathode has been introduced. It make tantalum source the net shape, which enforced to form the effect of hollow cathode. Ta\++is largely sputtered in the environment of glow discharge. If N\-2 is in flooded to the vacumm chamber,Ta\++ combine with N\++,then synthesized TaN film in the metal and Si substrate.By analyzing the structure,compositions,the surface and rapture morphology, and the adhesion strength of synthesized TaN thin film using XRD,AES,XPS and SEM, we found FCC TaN and HEX TaN film are formed in 20 steel and Si sheet. Meanwhile, there is formation of alloy layer between TaN film and steel substrate, which improved the adhesion strength of TaN film. The study manifest that the net shape cathode sputter can synthesized the optimum quality film of tantalum.