摘要
对半导体单异质结系统 ,引入三角势近似异质结势 ,考虑电子、杂质与声子的相互作用 ,利用改进的 LLP变分法讨论在界面附近束缚于正施主杂质的极化子基态能量 .对 Zn1-xCdx Se/Zn Se系统的杂质态结合能进行了数值计算 ,给出了结合能、声子贡献随杂质位置、电子面密度和组分的变化关系 .结果表明 ,杂质 -声子相互作用显著且声子对结合能的作用为负 .
The ground state binding energy of a polaron bound to a donor impurity near the interface of a semiconductor heterojunection is investigated with a modified LLP variational method by considering the influence of a triangular potential,the electron phonon and impurity phonon interaction,including the effect of half space bulk longitudinal and interface optical phonon modes.The impurity state binding energy is obtained numerically for the Zn 1-x Cd x Se/ZnSe system.The relations between the binding energy and the impurity position,the electron areal density and Cd concentration are given respectively.The results show that the impurity phonon interaction is important and the phonon contribution to the binding energy is negative.
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
北大核心
2002年第4期389-394,共6页
Journal of Inner Mongolia University：Natural Science Edition
关键词
半导体异质结
极化子
杂质态
三角势近似
施主杂质
semiconductor heterojunection
polaron
impurity state
triangular potential approximation
donor impurity
