原子级平整硅基底的制备

Preparation of Atomically-flat Silicon Substrate

采用 RCA方法与 Piranha溶液处理相结合 ,对单晶硅表面超声腐蚀处理 ,接触角、原子力显微镜(AFM)表征结果显示获得了平整高羟基密度的氧化物表面 .采用水相硅烷化 ,将 3 -氨基丙基 -三甲氧基硅烷(APS)组装在湿化学法处理的单晶硅表面上 ,AFM和 X-射线光电子能谱 (XPS)

With the treating method of combination of RCA and Piranha solution,an ultrasmooth and homogenous surface was obtained after ultrasonic treating.Wetchemically treated silicon substrate was modified with self assembled monolayer of 3 aminopropyl trimethylsilane by aqueous phase silanization,giving an ultrasmooth and homogenous surface terminated with amino groups.