应用于超大规模集成电路的新材料WSi_2的快速热退火形成

NEW MATERIAL FOR VLSI-FORMATION OF WSia BY RAPID THERMAL ANNEALING

用喇曼散射、扫描电镜、转靶X射线衍射、俄歇电子能谱和电阻率的测量研究了共溅射W-Si薄膜经真空15秒快速热退火后形成WSi_2的行为.在331和450cm^(-1)处有两个WSi_2的特征喇曼峰.随着快速热退火温度的升高,WSi_2的晶化不断增强.发现WSi_2中伴有W_5Si_3相存在,但其行为仍显示为WSi_2的特征.

In this paper, the behaviors of WSi2 formed from cosputtering W-Si film after rapid thermal annealing in vacuum for 15 sec. are investigated by Raman scattering, SEM, XRD, AES and resistivity measurements. There are two characteristic Raman peaks of WSi2 at 331 and 450cm-1. Crystallization of WSi2 increases with the increase in temperature of rapid thermal annealing. It is found that a W5Si3 phase exists in WSi2, but its behavior is still WSi2 character.