电力半导体器件快中子辐照的安全评价

Evaluation on the Safety of Power Semiconductor by Fast Neutron Irradiation

介绍了快中子辐照降低电力半导体器件少子寿命与中子活化的机理及区别 ,为避免活化所采取的工艺措施 ,活化分析及安全评价。结果表明 ,对于快速晶闸管或整流管 ,现有的快中子辐照及后处理工艺对人体是绝对安全的。

This paper introduces the mechanism of controlling the minority carrier lifetime and the activation of power semiconductor by fast neutron irradiation. The suitable process and the activation tests are applied to ensure personal safety. Tests indicate, it is most safe to irradiate the fast switching thyristors and rectifiers by our fast neutron irradiation process.