摘要
基于不同脉冲工作条件下的激射光谱测量可以对激光器的一系列特性进行分析表征 ,为此建立了中红外激光器测量表征系统 ,其中包括引入双调制技术的 FTIR发射光谱测量系统和具有甚宽脉冲参数调节范围的 I-V、I-P测量系统 ,并通过计算机经由 GPIB总线进行控制 ,同时开发了相应的测量软件。利用此系统对采用气态源分子束外延技术生长的中红外波段 In Al As/In Ga As/In P量子级联激光器的热特性进行了测量分析 ,得出了器件的热阻参数 ,同时也对器件的激射温度范围、激射波长的温度特性、激射时的最高脉冲占空比、激射谱线宽度及其模式特征等一系列参数进行了测量 ,获得了有意义的结果。
A mid infrared laser characterization system has been developed, including a GPIB programmable I P and I V set up based on direct waveform measurement with extraordinary wide pulse duration and duty cycle tuning range, in conjunction with a Fourier transform infrared spectroscopy system adopting double modulation technique. Based on this characterization system, the characteristics of gas source MBE grown InAlAs/InGaAs/InP quantum cascade lasers, especially on their thermal property, have been evaluated. The results show that in the combination of I P, I V and spectral measurements at various driving pulse parameters, the thermal resistance, lasing conditions as well as spectral characteristics of the mid infrared quantum cascade lasers could be deduced in successive. This characterization system is also a useful tool for the evaluation of other type diode lasers in the mid infrared band.
出处
《固体电子学研究与进展》
EI
CAS
CSCD
北大核心
2002年第2期205-209,共5页
Research & Progress of SSE
基金
国家重点基础研究专项经费 G2 0 0 0 0 683资助