GaAs基异质结材料MBE生长及应用

MBE Growth of GaAs-Based Heterojunction Materials and Their Application

对 Ga As基调制掺杂异质结材料中作为沟道层的 In Ga As的生长条件进行优化 ,并在缓冲层中嵌入LT-Ga As。功率 PHEMT器件结果为在栅长 Lg=1 .7μm时 ,跨导 gm≥ 40 0 m S/mm,BVDS>1 5 V,BVGS>1 2 V。

The growth conditions of the strained InGaAs channel with the LT GaAs buffer layer for GaAs based PHEMT have been optimized. The performance of the developed PHEMT devices with L g=1.7 μm is summarized with extrinsic transconductance g m≥400 mS/mm, BV DS >15 V,and BV GS >12 V,revealed the success in device application.