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GaAs基InAlAs/InGaAsMHEMT直流特性研究 被引量：2

DC Performance of GaAs-based InAlAs/InGaAs MHEMT
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摘要 报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反向击穿电压分别为 4V和 7.5 V。这些直流特性超过了相同的材料和工艺条件下 Ga As基 PHEMT的水平 ,与 In P基 In Al As/In Ga As Fabrication and performance of GaAs based InAlAs/InGaAs Metamorphic High Electron Mobility Transistor (MHEMT) were reported. Maximum extrinsic transconductance and maximum saturation current density are 350 mS/mm and 190 mA/mm respectively for the devices with gate length of 0.8 μm. Drain to source breakdown voltage and Schottky breakdown voltage are 4 V and 7.5 V, respectively. The devices have shown better DC performance than GaAs based PHEMTs and comparable performance to InP based HEMTs.
作者 李献杰 敖金平 曾庆明 刘伟吉 徐晓春 刘式墉 梁春广
机构地区 河北半导体研究所 吉林大学电子工程系
出处 《固体电子学研究与进展》 EI CAS CSCD 北大核心 2002年第2期235-237,共3页 Research & Progress of SSE
关键词 MHEMT 直流特性 砷化镓 铟铝砷 铟镓砷 电子迁移率晶体管 GaAs InAlAs/InGaAs MHEMT
分类号 TN325.3 [电子电信—物理电子学]
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参考文献3

  • 1[1]Tang O S, Hwang K C, Chao P C, et al. An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC. 22nd GaAs IC Symposium Digest, Seattle, WA, 2000:147～149
  • 2[2]Marsh P F, Chu S L, Lardizabal S M, et al. Low noise metamorphic HEMT devices and amplifiers on GaAs substrate. IEEE MTT-S International Microwave Symposium Digest, Anaheim, CA, 1999:105～108
  • 3[3]Cordier Y, Bollaert S, Zaknounce M, et al. InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: influence of indium content on material properties and device performance. Jpn J Appl Phys, 1999;38,1 164～1 168

同被引文献26

  • 1陈效建,吴旭,李拂晓,焦刚.Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管[J].Journal of Semiconductors,2004,25(9):1137-1142. 被引量：1
  • 2Ying C H, Sun T L, Hsuan C L, et al. The design and deployment of 40Gbit/s experimental network. Communications, In: Circuits and Systems Proceedings, 2006 International Conference on Vol.3, June 25-28, 2006. 1923-1927.
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  • 6Bodereau F, Miquel C, Debarge C, et al. Ka band converter assemblies for next telecommunication satellites. In: 2005 European Microwave Conference, Vol.2, Oct 4-6, 2005.
  • 7Kyoungwoon K, Wooyeol C, Sung, won K, et al. A 77 GHz Transceiver for Automotive Radar System Using a 120nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs. In: IEEE Compound Semiconductor Integrated Circuit Symposium, Nov, 2006. 201-204.
  • 8Nicolson S T, Tang K A, Yau K H K, et al. A Low-Voltage 77 GHz Automotive Radar Chipset. In: IEEE/MTT-S International Microwave Symposium, June 3-8, 2007. 487-490.
  • 9Yoshimi Y, Akira E, Keisuke S, et al. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs With an Ultrahigh Fr of 562 GHz. IEEE Elec Dev Lett, 2002, 23(10): 573-575.
  • 10Leuther A, Weber R, Dammann M, et al. Metamorphic 50nm InAs-channel HEMT. In: Indium Phosphide and Related Material, May, 2005. 129-132.

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固体电子学研究与进展
2002年 第2期

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