低能低剂量注水形成SOI结构材料的研究

Fabrication of SOI material by low en ergy and low dose oxygen implantation using water plasma

采用无质量分析器的离子注入机,以低能量低剂量注水的方式代替常规SIMOX注氧制备SOI材料。测试结果表明,此技术成功地制备了界面陡峭、平整,表层硅单晶质量好的SOI结构材料。在剂量一定的条件下,研究不同注入能量对SOI结构形成的影响,使用剖面透射电镜技术(XTEM)和二次离子质谱技术(SIMS)等测试方法对注入样品和退火后样品进行分析。结果表明,表层硅厚度随注入能量增大不断增大;埋层二氧化硅厚度相对独立,仅在超低能(50keV)低剂量情况下厚度出现明显降低;埋层质量(包括界面平整度、硅岛密度等)与注入能量变化相关。

An implanter without ion mass analy zer was used to fabricate thin SOI materials by low energy and low dose water ions implan tation instead of conventional SIMOX.The result shows that the interfaces between the top silic on,buried oxide layer and bulk silic on are smooth and sharp.XTEM and SIMS results of as -implante d and annealed samples reveal that th e thickness of the top Si is dependent on implanting energy at fixed dose,while the BOX thickness independent.Under50keV implantation energy,the thic kness of BOX is relative thin,but more Si islands emerge in the buried oxide layer.The appropriate energy and dose need to be chosen t o fabricate desirable SOI structure.