Si/SiGe异质结双极晶体管的研制(英文)

Development on Si/SiGe heterojunction bipolar transistors

通过理论分析计算、计算机模拟和工艺实验,对Si/SiGe异质结双极晶体管(HBT)的结构参数进行了精细的优化设计,特别是采用了本征间隔层和新颖的Ge分布曲线,有效地削弱了基区杂质外扩散、基区复合和异质结势垒效应的不利影响。开发了兼容于硅工艺的锗硅HBT工艺,并据此试制出了Si/SiGeHBT,测量结果表明,器件的直流和交流特性均较好,电流放大系数为50,截止频率fT为5.1GHz。

Through computer aided simulation and processing experiment,the stru cture parameters of Si /SiGe HBT were optimized carefully.An intrinsic space layer and a novel Ge fraction profile are used to reduce the influence of boron outdiffusion,base recombination a nd HBE.A SiGe HBT process compatible with convention al Si processes is developed,by whic h the SiGe HBT is fabricated successfully.The results of test in dicated that the current gainβis 50and the cut -off frequency f T is 5.1GHz.