缓冲层对氮化镓二维生长的影响

Influence of the buffer layer on GaN two-dimension growth by RF-plasma MBE

报道了在射频等离子体(RF-Plasma)辅助的分子束外延(MBE)技术中,使用白宝石(0001)衬底,采用低温缓冲层工艺外延氮化镓(GaN)。通过原子力显微镜(AFM)的表面形貌比较及X射线双晶衍射(XRD)ω扫描摇摆曲线的分析,讨论了低温缓冲层成核机理及缓冲层生长温度与形成准二维生长的关系,确立了缓冲层的三维成核、准二维生长的生长机理,并在此基础上实现了氮化镓外延层更好地二维生长,进一步提高了氮化镓外延层的晶体质量。

High quality gallium nitride(GaN)on sapphire(0001)was obtained by using RF -Plasma MBE.Low temperature buffer layer wa s very important for GaN two -dimension growth.The influence of buffer layer on forming quasi -two -dimension growth was investigated by using atom force micro -scope(AFM)and high -resolution X -ray diffraction(XRD)measurements.The mechanism of thre e -dimension nucleation and quasi -two -dimension of buffer layer growth wa s established.Then,the two -dimension growth of GaN epitaxial layer was carried out and the quali ty of GaN epitaxial layer was improved.