SOI的自加热效应与SOI新结构的研究

Study on self-heating effect and new structures of SOI material

阐述了自加热效应产生的原因以及它对SOI电路的影响,并介绍了为克服自加热效应和满足某些特殊器件和电路的要求,国内外正在竞相探索研究的新型SOI结构,如SOIM、SilicononAlN、GPSOI、SiCOI、GeSiOI、SON、SSOI等。结合SOI新结构制备工作,报道了SOI的自加热效应及其新结构的研究进展。

A brief introduction of the self -heating effect of SOI material and the t hermal analysis on it are presented.The concept of self-heating and the effects which cause,degradation of the drain current and formation of negative di fferential transconductance are described.Some new structures of SOI have been studied,such as SOIM,s ilicon -on -AlN,GPSOI,SiCOI,GeSiO I,SON,SSOI ,all of which can alleviate the effects ca used by self -heating.