摘要
研究了调制磁场对于非平衡磁控溅射系统的作用 ,调制磁场可以使非平衡磁控溅射形成具有较高等离子体密度的等离子体束流 ,延伸到靶前 110 m m以上。在靶前 6 0～ 110 mm的位置上 ,收集电流密度高达 9～ 10 m A/ cm2 ,收集的电流密度比常规的磁控溅射方法高 9倍以上 ,在调制磁场作用下磁控溅射沉积铜薄膜的沉积速率可以增加到 14倍。
In this paper, an unbalanced magnetron sputtering system is set up, and the adjustment and the effects of the unbalanced magnetic field are studied. It is indicated that the high-density plasma beam is formed and extends to above 110 mm far away from the target surface. The colleted current density keeps about 10 mA/cm 2 where it is steadied between 60~110 mm and is 9 times higher than that of the conventional magnetron. It is also indicated that the deposition rate of copper increases by 14 times over that of the conventional magnetron.
出处
《真空》
CAS
北大核心
2002年第3期27-29,共3页
Vacuum
