宽带隙半导体材料SiC研究进展及其应用

PROGRESS IN RESEARCH ON WIDE BAND-GAP SEMICONDUCTOR SiC AND ITS APPLICATION

SiC是第 3代宽带隙半导体的核心材料之一 ,具有极为优良的物理化学性能 ,应用前景十分广阔 .本文综合介绍SiC的基本特性 ,材料的生长技术 (包括体单晶生长和薄膜外延生长技术 ) ,SiC基器件的研发现状 ,应用领域及发展前景 .同时还介绍了作者用脉冲激光淀积法在Si衬底上制备出单晶 4H

Due to its excellent physical and chemical properties, SiC has been regarded as a key material for the third_generation semiconductors with extensive potential applications. In this paper, SiC properties, techniques for SiC bulk and film growth, current status of research on SiC_based device, and applications and prospect of SiC materials are reviewed. The aothors' results of growing single_crystalline 4H-SiC film on Si substrate by pulsed laser deposition are also described.