摘要
以某整机在调试过程中发生的一只 CMOS 驱动门电路的闩锁失效为例,具体分析了测试仪器感应漏电引起 CMOS 电路闩锁的现象、机理和原因,具有一定的典型性。
The phenomenon,construction,mechanism and causes of CMOS circuit latch resulted from testing instrument induction leakage are analyzed in this paper,based on the failure of CMOS driven gate in modulating process of a ma- chine.It is very typical.
出处
《电子元器件应用》
2002年第3期26-27,40,共3页
Electronic Component & Device Applications