摘要
研究了Sb_2O_3和In_2O_3对ZnO压敏电阻器性能的影响。适当添Sb_2O_3和In_2O_3可全面提高ZnO压敏电阻器的性能,使其击穿电场强度达326V/mm,漏电流小于1μA,非线性系数α值达107,通流量高达4kA/cm^2。
The effect of Sb_2O_3 and In_2O_3 addition on the properties of ZnO varistor was investigated. It was found that appropriate addition of Sb_2O_3 and In_2O_3 can promote the perfomances of ZnO varistor. For ZnO varistor, its brokendown electric field intensity E is 326V/mm, drain current is less than 1μA, nonlinear coefficient α is 107 and current flux is up to 4kA/cm^2.
出处
《电子元器件应用》
2002年第7期17-18,共2页
Electronic Component & Device Applications
