期刊文献+

Strained Si-Channel Heterojunction n-MOSFET 被引量:1

应变Si沟道异质结NMOS晶体管(英文)
下载PDF
导出
摘要 The process parameters are adjusted and the process procedure is simplified on the basis of precursor's work and the strained Si channel SiGe n MOSFET is fabricated successfully.This n MOSFET takes the strained Si layer(which is deposited on the relaxed SiGe buffer layer) as current channel and can provide a 48 5% improvement in electron mobility while keeping the gate voltage as 1V. 通过参数调整和工艺简化 ,制备了应变Si沟道的SiGeNMOS晶体管 .该器件利用弛豫SiGe缓冲层上的应变Si层作为导电沟道 ,相比于体Si器件在 1V栅压下电子迁移率最大可提高 48 5 % .
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第7期685-689,共5页 半导体学报(英文版)
基金 国家自然科学基金 (批准号 :6 9836 0 2 0 ) 国家九五重点科技攻关 (No .97 76 0 0 3 0 1)资助项目~~
关键词 STRAIN SIGE TRANSCONDUCTANCE MOBILITY NMOS 晶体管 应变 迁移率 锗化硅 硅沟道
  • 相关文献

参考文献1

二级参考文献1

  • 1Fu Jun,半导体学报,1997年,18卷,8期,603—608页

共引文献2

同被引文献9

  • 1International Technology Roadmap for Semiconductors[EB/OL].2006 Edition,SIA.http://public.itrs.net.
  • 2RIM K,ANDERSON R,BOYD D.Strained Si CMOS (SS CMOS) technology:opportunities and challenges[J].Sol Sta Elec,2003,47(7):1133-1139.
  • 3THOMPSON S E,ARMSTRONG M,AUTH C.A 90-nm logic technology featuring strained-silicon[J].IEEE Trans Elec Dev,2004,51(11):1790-1797.
  • 4HAPPER R.Gaining synergy with strained silicon[J].Sol Sta Technol,2005,48 (5):26-28.
  • 5CHRISTIANSEN S,ALBRECHT M,STRUNK H P.Strained state of Ge(Si) islands on Si finite element calculations and comparison to convergent beam electron-diffraction measurements[J].Appl Phys Lett,1994,64 (26):3167-3619.
  • 6BENABBAS T,FRANCOIS P,ANDROUSSI Y.Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy[J].J Appl Phys,1996,80(5):2763-2767.
  • 7LIN Y M,WU S L,CHANG S J,et al.Impact of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-Si technology[C] // Int SiGe Technol and Dev Meet.Princeton,New Jersey,USA.2006:1-2.
  • 8LIU H H,DUAN X F,XU Q X.Finite-element study of strain field in strained-Si MOSFET[J].Micron,2009,40(2):274-278.
  • 9王敬.延伸摩尔定律的应变硅技术[J].微电子学,2008,38(1):50-56. 被引量:4

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部