摘要
A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs
提出一种采用带 带隧穿热电子注入编程的新型快闪存贮器结构 ,在便携式低功耗的code闪存中有着广泛的应用前景 .该结构采用带 带隧穿热电子注入 (BBHE)进行“写”编程 ,采用源极Fowler Nordheim隧穿机制进行擦除 .研究显示控制栅编程电压为 8V ,漏极漏电流只有 3μA/ μm左右 ,注入系数为 4× 10 -4 ,编程速度可达 16 μs,0 8μm存贮管的读电流可达 6 0 μA/ μm .该新型结构具有高编程速度、低编程电压、低功耗、大读电流和高访问速度等优点 .
基金
国家九五计划资助项目 (No.97 76 0 0 1 0 1)~~
