摘要
将SiGe技术应用于功率半导体器件的特性改进 ,提出了新型SiGe/Si异质结p i n开关功率二极管结构 ,在分析器件结构机理的基础上 ,用Medici模拟了该器件的特性并进行了优化设计 .结果表明 ,该功率二极管具有低的正向压降 ,较少的存贮电荷 ,其性能远远超过Si的同类型结构 .这种性能的改进无需采用少子寿命控制技术 ,因而很容易集成于功率IC中 .
The SiGe technology is applied to the performance improvement of power semiconductor devices and the novel structure of SiGe/Si heterojunction p i n switching power diodes is presented.On the basis of analyzing the structure mechanism,the device characteristics are simulated by Medici and the optimal design is carried out.The simulation results indicate that the SiGe/Si heterojunction switching power diodes have low forward voltage drop,low stored charge and the performance is much better than the similar structure of Si devices.Since there is no need to use lifetime killing technology for the performance improvement,it can be easily integrated into power IC.
基金
陕西省自然科学基金重点资助项目 (项目编号 :2 0 0 0x0 9)~~
