一种快速光刻模拟中二维成像轮廓提取的新方法

A New Method of 2D Contour Extraction For Fast Simulation of Photolithographic Process

在一种新颖的快速光刻模拟算法的基础上 ,提出了一种新的基于稀疏空间点光强计算的二维成像轮廓提取算法 .该算法能够根据版图特点合理选择采样线的位置 ,有效地确定轮廓线存在的范围 ,并根据在采样线上光强单调分布的特性来快速地搜寻轮廓点 .实验表明 ,这是一种快速高效的轮廓提取方案 ,能够适应光学邻近校正中巨大的运算量 .

A new fast algorithm used for simulating optical intensity profile on silicon wafer is introduced,and a new algorithm for 2D contour extraction of shaped silicon areas based on intensity simulation of sparse aerial points is presented.This algorithm gives out groups of sampling lines according to the mask layout,thus effectively delimits the searching area for contours on wafer.A searching scheme to locate contour point on a sampling line having monotonous intensity distribution is presented and discussed in detail.It indicateds that it is a fast,efficient and practial way to calculate area contours on silicon,and a fitable algorithm for the huge number of calculating of the optical proximity correction.