摘要
本文提出了一个由低能电子衍射能带理论计算所确-定的,在Cu(001)表面的4重对称空隙上吸附Te原子的吸附层模型。原子层间距d_1=1.633±0.004,d_2=1.943±0.007(膨胀7.6%±0.007)。
In this paper, a adsorbed-layer model with each of the Te atoms on fourfold symmeterical hollows of the Cu(001) surface determined from band theory calculation of Low-Energy Electron Diffraction are presented. The atomic layer distance . d1 =1.633±0.004A and d2 = 1.943±0,007A (expanded 7.6%±0.007A).
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
1991年第3期1945-1952,共8页
Journal of Atomic and Molecular Physics