半导体集成电路用表面钝化膜的研究

STUDY ON SURFACE PASSIVATION FILMS FOR INTEGRATED CIRCUITS

对于高性能高可靠性集成电路来说 ,表面钝化已成为不可缺少的工艺措施之一。本文分析了目前应用最广泛的几种无机表面钝化膜 (SiO2 、Al2 O3 和Si3 N4)的特点 ,并指出氮化硅薄膜是半导体集成电路中最具应用前景的表面钝化材料 ,发展低温的热化学气相沉积 (CVD)工艺来沉积氮化硅表面钝化膜是集成电路发展的必然趋势 ,而开发新的能满足低温沉积氮化硅薄膜的硅源、氮源前驱体是解决这一难题的有效方法 ,并对这些前驱体物质的设计原则进行了阐述。

Surface passivation is one of the essential processing for high-perfomance integrated circuits.The characteristics of existed surface passivated films for integrated circuits,such as silica,alumina,and silicon nitride films,have been reviewed and discussed in detail.Silicon nitride film has promising application for surface passivation in the large scale integrated circuits(LSI).It is an inevitable trent for LSI that chemical vapor deposition of silicon nitride film at low temperature.One of an efficient way is to develop new organic precursors as nitrogen and/or silicon sources that can deposit silicon nitride film at relative low temperature.The essential principle of the organic precursors is still expatiated on.