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氮化镓低维材料 被引量:1

Preparation and Physical Properties of Low Dimensional GaN Materials
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摘要 本文综述了本实验室近年来在半导体低维材料制备和结构方面的一些进展 ,内容包括纳米线、纳米带、量子点、纳米固体的制备和结构特征、纳米线径向生长动力学和表面形貌稳定性。 This paper reviews the recent progress in the study of the fabrication and structural characteristics of low-dimensional GaN materials in our lab.,which include the nanowires,nanoribbons,quantum dots,radial growth dynamics and surface morphological stability.
作者 陈小龙
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2002年第3期277-282,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金 ( 5 992 5 2 0 6 10 0 440 0 1 5 9972 0 2 40 ) 中国科学院基金(KY95 1 AI 2 0 5 0 5 KY95 2 J1 4 11)资助项目
关键词 氮化镓 低维材料 生长动力学 形貌稳定性 半导体材料 low-dimensional GaN materials growth dynamics morphological stability
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参考文献9

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同被引文献30

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