摘要
化学配比对CdSe单晶体的性能有较大的影响。本文根据相平衡原理 ,利用热力学分析方法 ,分析了CdSe单晶体的气相生长过程 ,阐明了控制化学配比的原理 ,指出只有在固 -液 -气三相平衡或接近三相平衡的条件下 ,才能生长出符合化学配比的CdSe单晶体 ;同时还指出利用符合化学配比的CdSe多晶原料 ,在 112 0～ 1130℃可以生长出符合化学配比的CdSe单晶体。
The vapor-phase growth process of CdSe crystals has been analyzed on the base of phase equilibrium by using the thermodynamics method.It is found that CdSe crystal with stoichiometric composition can be prepared only when the equilibrium between solid,liquid and gas has been formed.Method of controlling the stoichiometric composition has been proposed according to the partial pressure of Cd and Se 2 along the liquidus respectively.CdSe crystal with stoichiometric composition can be obtained at 1120-1130℃ from CdSe powder with proper composition.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2002年第3期305-309,共5页
Journal of Synthetic Crystals
基金
教育部骨干教师资助项目
四川省学术带头人培养基金资助项目
