摘要
利用离子束辅助沉积技术在 Mo栅极上镀上并注入一层 Hf膜,对镀后的样品进行了形貌、结构、成份、膜厚及 Mo、Hf界面分析。将样品进行电子管模拟栅发射试验,栅极温度为 650℃,试验 1000h以上基本无栅发射电流,可以提高栅控管的可靠性和寿命。实验结果表明,阴极中的活性物质Ba蒸发到镀Hf的 Mo栅极表面,Ba,Hf和O_2能形成化合物,从而有效抑制栅极发射电流。
Hf film is coated on the surface of Mo-grids by vacuum ion beam aided deposition technology. The SEM, XRD and RBS analyses are performed on modified Mo-grids. Life-span tests of this modified Mo-grid are carried out by diode experiment. When the temperature of the modified Mo-grids is kept at 650℃, the modified Mo-grids' electron emission can not be detected with microammeter after 1000h life-span. The experimental results show that after the grid is contaminated by electron emission substance Ba of the cathode Hf formed compounds restrain effectively electron emission of grid.
出处
《电子与信息学报》
EI
CSCD
北大核心
2002年第7期1005-1008,共4页
Journal of Electronics & Information Technology
关键词
微波管
栅发射
离子束辅助沉积
化合物
Grid emission, Ion beam Aided deposition(IBAD), Compounds