摘要
阐述了金属氧化物SnO2纳米薄膜研究的发展情况及其应用前景,介绍了采用磁控溅射技术,使用混合气体Ar和O2,在衬底温度为150~400℃的耐热玻璃基片上制备了纳米晶SnO2∶Sb透明导电薄膜。通过测定x射线衍射谱,表明薄膜择优取向为[110]和[211]方向,SnO2∶Sb薄膜的结晶特性随衬底温度变化。
Nanocrystalline transparent conducting thin films is made by the method of the direct current magnetron sputtering in a mixture gas of Ar and O 2 ,and substrate temperature150~400℃.The films showed preferred orientation inandplane by x-ray diffraction.The crystalline properties of nanocrystalline SnO 2 ∶Sb thin films depends on the substrate temperature is discussed.
出处
《微纳电子技术》
CAS
2002年第4期19-21,共3页
Micronanoelectronic Technology
关键词
纳米晶
结晶特性
二氧化锡薄膜
衬底温度
magnetron sputtering
nanocrystalline SnO 2 thin films
crystalline properties
FE-SEM