摘要
具有角度限制的电子束投影曝光技术有可能成为21世纪最有潜力的纳米光刻技术之一。通过配备缩小投影透镜、掩模承片台、基片工作台和控制用计算机,我们将一台透射电子显微镜(TEM)改造成一台用于电子束投影曝光的试验装置。利用这台装置完成了有关掩模性能、电子光学特性和图形对准的一系列实验,同时取得了最细线宽为78nm的抗蚀剂图形。
The projection electron beam lithography with angular limitation(PEBL)is potentially one of the most attractive techniques for nano lithography in the21st Century.By equipping with demagnifing lenses,a mask stage,a sample stage and a control computer,we have modified a transmission electron microscope(TEM)to an experimental tool of PEBL.With this tool,a series of experiments on mask performance,electron optical character and pattern alignment have been carried out ,and the resist pattern with minimum linewidth of78nm has been obtained.
出处
《微纳电子技术》
CAS
2002年第4期37-41,共5页
Micronanoelectronic Technology
