Al-Si肖特基势垒诱导的光整流与双光子响应机制(英文)

Optical Rectification Induced by Al-Si Schottky Barrier Potential and Mechanism of Two-Photon Response

通过观测硅光电二极管的双光子响应和 Al/ Si肖特基势垒处的光生电压的各向异性 ,从实验和理论两个方面证实了肖特基势垒所产生的内建电场在硅光电探测器中诱发光整流现象 ,从而推论硅光电二极管的双光子响应机制中必然存在相位失配的倍频吸收 .如果内建电场足够强 ,倍频吸收将成为双光子响应的主要机制 .这与传统的认为双光子响应就是双光子吸收的观点不同 .

By observing two-photon response and anisotropy of the light-induced voltage in Al-Si Schottky barrier potential,it is certified from the experimental and theoretical analysis that the built-in electric field generated by the Schottky barrier potential will induce the phenomena of optical rectification in Si photodiode.Thus,it is deduced that there must be double-frequency absorption caused by phase-mismatch in the mechanism of two-photon response of Si photodiode.If the intensity of the built-in electric field is strong enough,the double-frequency absorption will be the main factor of the two-photon response,which is different from the conventional opinion that the two-photon response is just the two-photon absorption.