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分子动力学模拟铜薄膜的热导率 被引量：4

MOLECULAR DYNAMICS SIMULATION TO THE THERMAL CONDUCTIVITY OF COPPER THIN-FILM
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摘要 采用分子动力学 (MD)方法模拟铜薄膜的热导率 ,给出了厚度在 10 0～ 40 0nm、温度在 10 0～ 6 0 0K范围内铜薄膜热导率对尺寸及温度的依赖关系 . Thermal conductivity of copper films is simulated using the molecular dynamics.Size and temperature dependent effects of the films with 100～400*!nm thickness at 100～600*!K temperature are summarized according to the simulation.
作者 叶杰成 唐祯安
机构地区 大连理工大学电子工程系
出处 《计算物理》 CSCD 北大核心 2002年第4期321-324,共4页 Chinese Journal of Computational Physics
基金 国家自然科学基金 ( 5 9995 5 5 0 5 )资助项目
关键词 铜薄膜 热导率 分子动力学 计算机模拟 thin-film thermal conductivity molecular dynamics
分类号 O484.5 [理学—固体物理] TP391.9 [自动化与计算机技术—计算机应用技术]
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参考文献10

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同被引文献19

  • 1袁世平,姜培学.固态金属中声子热传递的分子动力学模拟研究[J].工程热物理学报,2005,26(z1):175-178. 被引量：4
  • 2郭岩,畅庚榕,马胜利,徐可为.PCVD制备新型Ti-Si-C-N纳米复合超硬薄膜及其微观结构表征[J].金属学报,2005,41(9):985-988. 被引量：4
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计算物理
2002年 第4期

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