摘要
φ6 0 mm× 6 0 0μm硅 PIN半导体探测器是近年国内新研制的大面积高灵敏度探测器 ,用 10 13Bq级的 60 Coγ放射源测量了该类探测器的 60 Coγ灵敏度 ,用 CΓC脉冲辐射源 (约 0 .2 Me V)测量了该类探测器的时间响应。实验和理论计算表明 :该类探测器的 60 Coγ灵敏度约为 5 f C·cm2 / Me V。脉冲响应上升时间约为 10 ns,脉冲响应半高宽约为 35 ns。
mm×600μm silicon PIN detector is a large area and high sensitive one which has been developed in near years .We have measured their γ sensitivity and the time response. The experiment and theoretical calculated results in: 60Co γ sensitivity is about 5 fC·cm 2/MeV, the rise time is about 10ns and the half-high-width time is about 35ns.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2002年第4期338-340,共3页
Nuclear Electronics & Detection Technology
基金
中国工程物理研究院 J0 9专项课题资助