自截止腐蚀制备Si平面薄膜中的B杂质分析

Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process

以重掺杂自截止腐蚀工艺制备的厚度为 3～ 4μm的自支撑Si平面薄膜已在X光激光和惯性约束聚变分解实验中得到应用。制备过程中 ,重掺杂B杂质的引入会对获得的Si平面薄膜的应用带来影响。本工作研究采用次级离子质谱 (SIMS)测量Si平面薄膜中B杂质的浓度分布 ,结合在软X光波段下同步辐射直接测得的Si薄膜的透过率结果 。

Thin silicon foils with thickness about 3 to 4 μm are prepared by semiconductor process combined with heavy doped self stop etching process. Boron impurity in thin silicon foils influences on the property of thin silicon foils. Secondary ion mass spectrometry is adopted to measured the distribution of boron impurity. Transmissivity of thin silicon foils is measured on Beijing synchrotron radiation facility by using the synchrotron X ray beam with the wavelengh from 12 0 to 21 0 nm.