用于等电子谱线法诊断电子温度的Mg/Si混合膜制备工艺研究

Fabrication of the Mg/Si Alloy Films for Determination of Electron Temperature of Plasmas by Isoelectronic Line Ratios

进行了在单靶头磁控溅射装置上采用复合靶溅射制备Mg/Si混合膜的工艺研究 ,制备出了不同组分的Mg/Si混合膜 ,并利用X射线衍射 (XRD)、原子力显微镜 (AFM )、透射电镜 (TEM )等测试手段 ,对混合膜的结构进行了初步分析。分析结果表明 :Mg/Si混合膜中的镁以单取向多晶形式存在 。

The fabrication of the Mg/Si alloy films using magnetron sputtering method is studied, in which a single compound cathode target is adopted. The structure of Mg/Si alloy films are measured and analysed by X ray diffraction, atomic force microscope, and transmission election microscope, respectively. For Mg/Si alloy films, amorphous silicon is scattered among Mg crystal, the orientation of Mg crystal is single on substrate.