金刚石薄膜在氧化铝陶瓷上低压成核

Lower Gas Pressure Enhanced Diamond Nucleation on Alumina by Microwave Plasma Chemical Vapor Deposition

在微波等离子体化学气相沉积（MPCVD）系统中,用低压成核方法,在氧化铝陶瓷基片上获得了高成核密度的金刚石薄膜.实验表明,金刚石成核密度随系统压强减小而提高.在此基础上,提出一种MPCVD系统中金刚石成核的动力学模型,并指出对应于最高成核密度有一临界压强存在.

Under lower gas pressure, the high-density nucleation of diamond films on alumina was successfully achieved by microwave plasma-enhanced chemical vapor deposition (MPCVD). It was found that the nucleation density increased with the decreases of gas pressure. Based on these results, a kinetic model for diamond nucleation in MPCVD system was proposed. The critical gas pressure corresponding to the highest nucleation density was also discussed.