摘要
用纳秒脉冲激光在硅材料上制备一维和二维硅光子晶体结构,在这种一维和二维硅光子晶体上观测到反射泰伯(Talbot)效应成像。文中给出反射Talbot效应成像的理论模型,与传统的透射泰伯效应不同,反射泰伯效应有明显的泰伯距离变化和高阶衍射成像等现象。在反射泰伯效应成像中,相邻反射泰伯像之间的间距随像距增加呈线性增长;在泰伯距离间隔中,观察到交替的亮场和暗场成像。实验结果表明,选择适当输入光束的波阵面形状能够增大泰伯像的放大率,选择高阶衍射级能够提高泰伯像的分辨率。这种反射泰伯效应成像具有光路简洁和能够进行微区放大的特点,且不需将成像仪器放入样品室,这在硅基微加工与制备显微检测方面会有很好的应用。
The reflection Talbot effect is measured on 1D and 2D photonic crystal of silicon. Many new phenomena are observed in the reflection Talbot effect, such as the change of the Talbot interval distance and high- order two-photon imaging. It is found that the interval between two adjacent reflecting Talbot images increases with increasing image distance. The results of experiment show that selecting suitable wave-front shape of injection wave can enlarge the amplification rate and improve the resolution of Talbot imaging. The reflection Talbot effect can have a lot of good applications in microscopy of on-line micro-fabrication.
出处
《贵州科学》
2014年第4期19-23,共5页
Guizhou Science
基金
国家自然科学基金(批准号:11264007)
关键词
反射泰伯效应
硅光子晶体
波阵面
高阶衍射成像
在线显微检测
reflection Talbot effect, photonic crystal of silicon, wave-front, high-order two-photon imaging, micros- copy of on-line micro-fabrication
