图形化ZnO纳米杆的生长与表征

Growth and Characterization of Graphical ZnO Nanorods

为了得到具有较好紫外发射特性的ZnO纳米杆阵列,以氢气腐蚀过的GaN薄膜为衬底,在较低的温度(105°C)下采用水浴法制备图形化ZnO纳米杆阵列。对制备的样品进行结构和形貌表征,并通过对比实验研究氢气腐蚀处理的影响。结果表明,氢气腐蚀过的GaN薄膜衬底,有利于形成致密、均匀、定向排列的ZnO六边形图案,符合螺旋位错驱使的生长机制。

To obtain ZnO nanorod arrays which have good UV emission characteristics,reports asimple and effective method for fabricating and patterning highly ordered ZnO nanorod arrays onH2-decomposed GaN film,using aqueous solution at low temperatures（105 ℃）. The prepared sam-ples were characterized the microstructure and morphology. The effects of hydrogen corrosion treat-ment have been studied by comparative experiment. The results show that the H2-decomposed GaNfilm substrate is conducive to the formation of a dense,uniform,hexagonal pattern of oriented ZnO,which is consistent with the screw dislocation growth mechanism.