摘要
针对功率二极管反向恢复既快又软的开关特性要求,根据Rajapakse.二极管反向恢复模型,模拟二极管反向恢复I-t、V-t变化规律,模拟结果与已有文献结果吻合,通过控制变量得到不同存储时间trra、恢复时间trrb、正向电流If、正向电流上升速率dIf/dt对反向恢复电流的影响,模拟结果表明:trra,trrb跟二极管反向恢复过程密切相关。文中最后分析计算了不同电压,不同电流下二极管反向恢复过程中的功率损耗。
For the requirements of fast and soft switching characteristics, the power diode reverse recovery I-t, V-t characteristics were investigated base on Rajapakse model, the modeling results coincide with other literature＇s. The influences of the storage time trra the recovery time trrb, the forward current Is the rate of forward current rising dIf/dt on the reverse recovery I-t characteristics were studied by controlled variable. The results showed that trra and trrb were closely related with the diode reverse recovery process. We also calculate the power loss of the diode reverse recovery with different currents and different voltages.
出处
《电子设计工程》
2014年第13期179-181,共3页
Electronic Design Engineering
