摘要
对6英寸整流管的工艺进行设计和实验研究。为提高大直径整流管芯片的电流容量,选择合适的硅单晶材料,利用独特的扩散方法,解决了扩散浓度不均匀及其高温工艺过程中的变形问题。结合双负角台面造型和压接式封装技术,研制的6英寸整流管电流容量为8 kA,电压容量为5 kV,且参数的一致性很好,从而提高了大直径整流管并联使用的可靠性。
The manufacture process of 6-inch rectifier diode is designed and researched experimentally.In order to improve high current capacity of the large diameter rectifier diode, the appropriate substrate material is chosen, and some problems in manufacture process,such as,the inhomogeneous diffusion concentration, chip deformation in high temperature process,are solved by using special diffusion method.The 6-inch rectifier diode is developed combined the double-negative bevel angle termination and press-pack package technique,which has the 8 kA high current capacity and 5 kV voltage level, and the consistent parameters, thereby the reliability of large diameter rectifier in parallel application is improved.
出处
《电力电子技术》
CSCD
北大核心
2014年第7期75-76,共2页
Power Electronics
关键词
整流管
扩散
封装
rectifier diode
diffusion
package
